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this is information on a product in full production. october 2012 doc id 022902 rev 2 1/15 15 stp36n55m5 STW36N55M5 n-channel 550 v, 0.06 typ., 33 a mdmesh? v power mosfet in to-220 and to-247 packages datasheet ? production data features worldwide best r ds(on) * area higher v dss rating and high dv/dt capability excellent switching performance 100% avalanche tested applications switching applications description these devices are n-channel mdmesh? v power mosfets based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order codes v dss @ t jmax r ds(on) max i d stp36n55m5 600 v < 0.08 33 a STW36N55M5 to-247 to-220 1 2 3 tab 1 2 3 !-v $4!" ' 3 table 1. device summary order codes marking package packaging stp36n55m5 36n55m5 to-220 tu b e STW36N55M5 to-247 www.st.com
contents stp36n55m5, STW36N55M5 2/15 doc id 022902 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
stp36n55m5, STW36N55M5 electrical ratings doc id 022902 rev 2 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 33 a i d drain current (continuous) at t c = 100 c 20.8 a i dm (1) drain current (pulsed) 132 a p tot total dissipation at t c = 25 c 190 w dv/dt (1) 1. i sd 33 a, di/dt 400 a/s; v ds(peak) < v (br)dss , v dd = 340 v. peak diode recovery voltage slope 15 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220 to-247 r thj-case thermal resistance junction-case max 0.66 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 c/w table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetetive or not repetetive (pulse width limited by t jmax ) 7a e as single pulse avalanche energy (starting t j =25c, i d = i ar ; v dd =50 v) 510 mj
electrical characteristics stp36n55m5, STW36N55M5 4/15 doc id 022902 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 550 v i dss zero gate voltage drain current (v gs = 0) v ds = 550 v v ds = 550 v, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 16.5 a 0.06 0.08 table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 2670 75 6.6 - pf pf pf c o(tr) (1) 1. time related is defined as a constant equivalent capacitance giving the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v ds = 0 to 440 v, v gs = 0 -192-pf c o(er) (2) 2. energy related is defined as a constant equival ent capacitance giving the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related -71-pf r g intrinsic gate resistance f = 1 mhz open drain - 1.85 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 440 v, i d = 16.5 a, v gs = 10 v (see figure 18 ) - 62 15 27 - nc nc nc
stp36n55m5, STW36N55M5 electrical characteristics doc id 022902 rev 2 5/15 table 7. switching times symbol parameter test conditions min. typ. max unit t d(v) t r(v) t f(i) t c(off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 22 a, r g = 4.7 , v gs = 10 v (see figure 19 and figure 22 ) - 56 13 13 17 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 33 132 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 33 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 33 a, di/dt = 100 a/s v dd = 100 v (see figure 22 ) - 334 5 31 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 33 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 22 ) - 406 7 35 ns c a
electrical characteristics stp36n55m5, STW36N55M5 6/15 doc id 022902 rev 2 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220 figure 3. thermal impedance for to-220 figure 4. safe operating area for to-247 figure 5. thermal impedance for to-247 figure 6. output characteristics figure 7. transfer characteristics i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am1492 8 v1 i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am14929v1 i d 60 50 40 0 0 10 v d s (v) 20 (a) 5 15 25 70 6v 7v v g s =10v 3 0 20 10 am149 3 0v1 i d 60 40 20 0 3 5 v g s (v) 7 (a) 4 6 8 70 9 10 3 0 50 v d s =25v am149 3 1v1
stp36n55m5, STW36N55M5 electrical characteristics doc id 022902 rev 2 7/15 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on-resistance vs temperature v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =440v i d =16.5a 50 12 3 00 200 100 0 400 450 v d s 60 70 3 50 250 150 50 v d s (v) am149 3 2v1 r d s (on) 0.06 0.055 0.05 0.045 0 20 i d (a) ( ) 10 3 0 0.065 v g s =10v 15 25 5 am149 33 v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am149 3 4v1 e o ss 6 4 2 0 0 100 v d s (v) ( j) 400 8 200 3 00 10 500 am149 3 5v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 i d =250 a am05459v 3 r d s (on) 1.7 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 0.7 1.1 1.5 1.9 2.1 v g s =10v i d =16.5v am05460v 3
electrical characteristics stp36n55m5, STW36N55M5 8/15 doc id 022902 rev 2 figure 14. source-drain diode forward characteristics figure 15. normalized b vdss vs temperature figure 16. switching losses vs gate resistance (1) 1. eon including reverse recovery of a sic diode v s d 0 20 i s d (a) (v) 10 50 3 0 40 0 0.2 0.4 0.6 0. 8 1.0 1.2 t j =-50c t j =150c t j =25c am05461v 3 v d s -50 0 t j (c) (norm) -25 75 25 50 100 0.92 0.94 0.96 0.9 8 1.00 1.04 1.06 1.02 i d = 1ma 1.0 8 am10 3 99v1 e 3 00 200 100 0 0 20 r g ( ) ( j) 10 3 0 400 500 600 40 i d =22a v dd =400v eon eoff v g s =10v am149 3 6v1
stp36n55m5, STW36N55M5 test circuits doc id 022902 rev 2 9/15 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform !-v 6 '3 0 7 6 $ 2 ' 2 , $54 & & 6 $$ !-v 6 $$ k k k k k 6 6 i 66 '-!8 & 0 7 ) ' #/.34 n& $54 6 ' !-v ! $ $54 3 " ' ! ! " " 2 ' ' &!34 $)/$% $ 3 , ( & & 6 $$ !-v 6 i 0 w 6 $ ) $ $54 , & & 6 $$ !-v 6 "2 $33 6 $$ 6 $$ 6 $ ) $- ) $ am05540v2 id vg s vd s 90 % vd s 10 % id 90 % vg s on tdel a y-off tf a ll tri s e tcro ss -over 10 % vd s 90 % id vg s (i(t)) on -off tf a ll tri s e - )) concept w a veform for ind u ctive lo a d t u rn-off
package mechanical data stp36n55m5, STW36N55M5 10/15 doc id 022902 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com . ecopack is an st trademark. table 9. to-220 type a mechanical data dim. mm min. typ. max. a4.40 4.60 b0.61 0.88 b1 1.14 1.70 c0.48 0.70 d 15.25 15.75 d1 1.27 e 10 10.40 e2.40 2.70 e1 4.95 5.15 f1.23 1.32 h1 6.20 6.60 j1 2.40 2.72 l13 14 l1 3.50 3.93 l20 16.40 l30 28.90 ? p3.75 3.85 q2.65 2.95
stp36n55m5, STW36N55M5 package mechanical data doc id 022902 rev 2 11/15 figure 23. to-220 type a drawing 00159 88 _typea_rev_ s
package mechanical data stp36n55m5, STW36N55M5 12/15 doc id 022902 rev 2 table 10. to-247 mechanical data dim. mm. min. typ. max. a 4.85 5.15 a1 2.20 2.60 b1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e 5.30 5.45 5.60 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s 5.30 5.50 5.70
stp36n55m5, STW36N55M5 package mechanical data doc id 022902 rev 2 13/15 figure 24. to-247 drawing 0075 3 25_g
revision history stp36n55m5, STW36N55M5 14/15 doc id 022902 rev 2 5 revision history table 11. document revision history date revision changes 07-mar-2012 1 first release. 23-oct-2012 2 document status promoted from preliminary data to production data.
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